![]() ![]() A carrier mobility of ∼50 cm 2V −1s −1 is calculated, about an order of magnitude below equivalent carrier mobilities in p-type silicon, but sufficiently high to preclude carrier-lattice coupling associated with small polarons.ĭomain walls in ferroelectrics are interface structures that separate volumes of differently oriented electrical polarization. By calibration of the AFM signal, an upper estimate of ∼1 × 10 16 cm −3 is calculated for the mobile carrier density in the wall, around four orders of magnitude below that required for complete screening of the polar discontinuity. Studying YbMnO 3 single crystals, we have confirmed that p-type conduction occurs in tail-to-tail charged domain walls. Here we demonstrate that intermittent-contact atomic force microscopy (AFM) can detect the Hall effect in conducting domain walls. Carrier types, densities and mobilities have not been determined and transport mechanisms are still a matter of guesswork. Surprisingly, however, little is known about the most fundamental aspects of conduction. Enhanced conductivity at specific domain walls in ferroelectrics is now an established phenomenon.
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